All MOSFET. MMBFJ112 Datasheet

 

MMBFJ112 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMBFJ112
   Marking Code: 6R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.35 W
   Maximum Drain-Source Voltage |Vds|: 35 V
   Maximum Drain Current |Id|: 0.005 A
   Maximum Junction Temperature (Tj): 150 °C
   Maximum Drain-Source On-State Resistance (Rds): 50 Ohm
   Package: SOT-23

 MMBFJ112 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMBFJ112 Datasheet (PDF)

 ..1. Size:151K  fairchild semi
mmbfj111 mmbfj112 mmbfj113.pdf

MMBFJ112 MMBFJ112

August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark

 ..2. Size:488K  fairchild semi
j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf

MMBFJ112 MMBFJ112

J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D

 7.1. Size:178K  fairchild semi
mmbfj110.pdf

MMBFJ112 MMBFJ112

April 2011MMBFJ110N-Channel SwitchSuperSOT-3Features3 This device is designed for digital switching applications2 where very low on resistance is mandatory.Marking : 110 Sourced from process 58.11. Drain 2. Source 3. GateAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -

 8.1. Size:76K  motorola
mmbfj175.pdf

MMBFJ112 MMBFJ112

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ175LT1/DJFET ChopperMMBFJ175LT1P Channel DepletionMotorola Preferred Device2 SOURCE3GATE31 DRAIN12MAXIMU

 8.2. Size:56K  motorola
mmbfj175lt1rev0d.pdf

MMBFJ112 MMBFJ112

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ175LT1/DJFET ChopperMMBFJ175LT1P Channel DepletionMotorola Preferred Device2 SOURCE3GATE31 DRAIN12MAXIMU

 8.3. Size:57K  motorola
mmbfj177lt1rev0d.pdf

MMBFJ112 MMBFJ112

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ177LT1/DJFET ChopperP Channel Depletion MMBFJ177LT12 SOURCE3GATE1 DRAIN31MAXIMUM RATINGS2Rating Symbol Val

 8.4. Size:128K  fairchild semi
mmbfj108.pdf

MMBFJ112 MMBFJ112

J108/J109/J110/MMBFJ108N-Channel Switch3 This device is designed for digital switching applications where very low on resistance is mandatory.2 Sourced from Process 58.TO-921 SuperSOT-31Marking: I81. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25

 8.5. Size:728K  fairchild semi
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf

MMBFJ112 MMBFJ112

J174 MMBFJ175J175 MMBFJ176J176 MMBFJ177J177GSS TO-92DSOT-23GDMark: 6W / 6X / 6YNOTE: Source & Drain are interchangeableP-Channel SwitchThis device is designed for low level analog switching sample and holdcircuits and chopper stabilized amplifiers. Sourced from Process 88.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units

 8.6. Size:129K  fairchild semi
j108 j109 j110 mmbfj108.pdf

MMBFJ112 MMBFJ112

J108/J109/J110/MMBFJ108N-Channel Switch3 This device is designed for digital switching applications where very low on resistance is mandatory.2 Sourced from Process 58.TO-921 SuperSOT-31Marking: I81. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25

 8.7. Size:109K  onsemi
mmbfj177lt1-d.pdf

MMBFJ112 MMBFJ112

MMBFJ177LT1GJFET ChopperP-Channel - DepletionFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliant2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc1 DRAINReverse Gate-Source Voltage VGS(r) -25 VdcStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings

 8.8. Size:105K  onsemi
mmbfj175lt1.pdf

MMBFJ112 MMBFJ112

MMBFJ175LT1GJFET ChopperP-Channel - DepletionFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant2 SOURCEMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain-Gate Voltage VDG 25 VReverse Gate-Source Voltage VGS(r) -25 V1 DRAINTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR-5 Board, PD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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