MMD50R380PRH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMD50R380PRH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 357 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO-252

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MMD50R380PRH datasheet

 ..1. Size:1286K  magnachip
 mmd50r380prh.pdf pdf_icon

MMD50R380PRH

MMD50R380P Datasheet MMD50R380P 500V 0.38 N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:309K  inchange semiconductor
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MMD50R380PRH

isc N-Channel MOSFET Transistor MMD50R380PRH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 4.1. Size:1337K  magnachip
 mmd50r380p.pdf pdf_icon

MMD50R380PRH

MMD50R380P Datasheet MMD50R380P 500V 0.38 N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

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