Справочник MOSFET. MMD50R380PRH

 

MMD50R380PRH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMD50R380PRH
   Маркировка: 50R380
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 21.8 nC
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 357 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для MMD50R380PRH

 

 

MMD50R380PRH Datasheet (PDF)

 ..1. Size:1286K  magnachip
 mmd50r380prh.pdf

MMD50R380PRH MMD50R380PRH

MMD50R380P Datasheet MMD50R380P 500V 0.38 N-channel MOSFET Description MMD50R380P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:309K  inchange semiconductor
 mmd50r380prh.pdf

MMD50R380PRH MMD50R380PRH

isc N-Channel MOSFET Transistor MMD50R380PRHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 4.1. Size:1337K  magnachip
 mmd50r380p.pdf

MMD50R380PRH MMD50R380PRH

MMD50R380P Datasheet MMD50R380P 500V 0.38 N-channel MOSFET Description MMD50R380P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

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