MMD70R1K4PRH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMD70R1K4PRH
Código: 70R1K4P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 33 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 3.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 11 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 240 pF
Resistencia entre drenaje y fuente RDS(on): 1.4 Ohm
Paquete / Cubierta: TO-252
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MMD70R1K4PRH Datasheet (PDF)
mmd70r1k4prh.pdf
MMD70R1K4P Datasheet MMD70R1K4P 700V 1.4 N-channel MOSFET Description MMD70R1K4P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmd70r1k4prh.pdf
isc N-Channel MOSFET Transistor MMD70R1K4PRHFEATURESDrain Current : I = 3.2A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mmd70r600prh.pdf
MMD70R600P Datasheet MMD70R600P 700V 0.6 N-channel MOSFET Description MMD70R600P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmd70r900p.pdf
MMD70R900P Datasheet MMD70R900P 700V 0.9 N-channel MOSFET Description MMD70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmd70r900prh.pdf
MMD70R900P Datasheet MMD70R900P 700V 0.9 N-channel MOSFET Description MMD70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmd70r750prh.pdf
MMD70R750P Datasheet MMD70R750P 700V 0.75 N-channel MOSFET Description MMD70R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmd70r600prh.pdf
isc N-Channel MOSFET Transistor MMD70R600PRHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mmd70r900prh.pdf
isc N-Channel MOSFET Transistor MMD70R900PRHFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
mmd70r750prh.pdf
isc N-Channel MOSFET Transistor MMD70R750PRHFEATURESDrain Current : I = 5.8A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
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