MMD70R1K4PRH Todos los transistores

 

MMD70R1K4PRH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMD70R1K4PRH
   Código: 70R1K4P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-252

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MMD70R1K4PRH Datasheet (PDF)

 ..1. Size:1211K  magnachip
mmd70r1k4prh.pdf

MMD70R1K4PRH
MMD70R1K4PRH

MMD70R1K4P Datasheet MMD70R1K4P 700V 1.4 N-channel MOSFET Description MMD70R1K4P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 ..2. Size:310K  inchange semiconductor
mmd70r1k4prh.pdf

MMD70R1K4PRH
MMD70R1K4PRH

isc N-Channel MOSFET Transistor MMD70R1K4PRHFEATURESDrain Current : I = 3.2A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.1. Size:1287K  magnachip
mmd70r600prh.pdf

MMD70R1K4PRH
MMD70R1K4PRH

MMD70R600P Datasheet MMD70R600P 700V 0.6 N-channel MOSFET Description MMD70R600P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.2. Size:1206K  magnachip
mmd70r900p.pdf

MMD70R1K4PRH
MMD70R1K4PRH

MMD70R900P Datasheet MMD70R900P 700V 0.9 N-channel MOSFET Description MMD70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.3. Size:1154K  magnachip
mmd70r900prh.pdf

MMD70R1K4PRH
MMD70R1K4PRH

MMD70R900P Datasheet MMD70R900P 700V 0.9 N-channel MOSFET Description MMD70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.4. Size:1279K  magnachip
mmd70r750prh.pdf

MMD70R1K4PRH
MMD70R1K4PRH

MMD70R750P Datasheet MMD70R750P 700V 0.75 N-channel MOSFET Description MMD70R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.5. Size:309K  inchange semiconductor
mmd70r600prh.pdf

MMD70R1K4PRH
MMD70R1K4PRH

isc N-Channel MOSFET Transistor MMD70R600PRHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.6. Size:309K  inchange semiconductor
mmd70r900prh.pdf

MMD70R1K4PRH
MMD70R1K4PRH

isc N-Channel MOSFET Transistor MMD70R900PRHFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.7. Size:309K  inchange semiconductor
mmd70r750prh.pdf

MMD70R1K4PRH
MMD70R1K4PRH

isc N-Channel MOSFET Transistor MMD70R750PRHFEATURESDrain Current : I = 5.8A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

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