MMD70R1K4PRH. Аналоги и основные параметры
Наименование производителя: MMD70R1K4PRH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 240 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO-252
Аналог (замена) для MMD70R1K4PRH
- подборⓘ MOSFET транзистора по параметрам
MMD70R1K4PRH даташит
mmd70r1k4prh.pdf
MMD70R1K4P Datasheet MMD70R1K4P 700V 1.4 N-channel MOSFET Description MMD70R1K4P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmd70r1k4prh.pdf
isc N-Channel MOSFET Transistor MMD70R1K4PRH FEATURES Drain Current I = 3.2A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
mmd70r600prh.pdf
MMD70R600P Datasheet MMD70R600P 700V 0.6 N-channel MOSFET Description MMD70R600P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmd70r900p.pdf
MMD70R900P Datasheet MMD70R900P 700V 0.9 N-channel MOSFET Description MMD70R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
Другие IGBT... MMBFJ112, MMBFJ113, MMBFJ305, MMD50R380PRH, MMD60R360PRH, MMD60R580PRH, MMD60R750PRH, MMD60R900PRH, IRF520, MMD70R600PRH, MMD70R750PRH, MMD70R900PRH, MMD80R900PRH, MMDF1N05ER2G, MMDF3N02HDR2, MMDF3N02HDR2G, MME60R290PRH
History: AP16N50W | RCD075N20 | H5N2507P
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