MMF60R750PTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMF60R750PTH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 27.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 5.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 29 nS
Cossⓘ - Capacitancia de salida: 360 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de MMF60R750PTH MOSFET
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MMF60R750PTH datasheet
..1. Size:1049K magnachip
mmf60r750pth.pdf 
MMF60R750P Datasheet 1 MMF60R750P 600V 0.75 N-channel MOSFET Description MMF60R750P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
..2. Size:279K inchange semiconductor
mmf60r750pth.pdf
isc N-Channel MOSFET Transistor MMF60R750PTH FEATURES Drain Current I = 5.7A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
8.1. Size:1167K 1
mmf60r280q.pdf
MMF60R280Q Datasheet MMF60R280Q 600V 0.28 N-channel MOSFET Description MMF60R280Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
8.2. Size:1156K magnachip
mmf60r580pth.pdf
MMF60R580P Datasheet MMF60R580P 600V 0.58 N-channel MOSFET Description MMF60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
8.3. Size:1287K magnachip
mmf60r115pth.pdf
MMF60R115P Datasheet MMF60R115P 600V 0.115 N-channel MOSFET Description MMF60R115P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
8.4. Size:1231K magnachip
mmf60r280qbth.pdf
MMF60R280QB Datasheet MMF60R280QB 600V 0.28 N-channel MOSFET Description MMF60R280QB is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
8.5. Size:1243K magnachip
mmf60r190pth.pdf
MMF60R190P Datasheet MMF60R190P 600V 0.19 N-channel MOSFET Description MMF60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
8.6. Size:1588K magnachip
mmf60r190qth.pdf
MMF60R190Q Datasheet MMF60R190Q 600V 0.19 N-channel MOSFET Description MMF60R190Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
8.7. Size:1268K magnachip
mmf60r360pth.pdf
MMF60R360P Datasheet MMF60R360P 600V 0.36 N-channel MOSFET Description MMF60R360P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
8.8. Size:1130K magnachip
mmf60r290pth.pdf
MMF60R290P Datasheet MMF60R290P 600V 0.29 N-channel MOSFET Description MMF60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
8.9. Size:1563K magnachip
mmf60r580qth.pdf
MMF60R580Q Datasheet MMF60R580Q 600V 0.58 N-channel MOSFET Description MMF60R580Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
8.10. Size:1324K magnachip
mmf60r360q.pdf
MMF60R360Q Datasheet MMF60R360Q 600V 0.36 N-channel MOSFET Description MMF60R360Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
8.11. Size:279K inchange semiconductor
mmf60r580pth.pdf
isc N-Channel MOSFET Transistor MMF60R580PTH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.12. Size:279K inchange semiconductor
mmf60r115pth.pdf
isc N-Channel MOSFET Transistor MMF60R115PTH FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.115 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
8.13. Size:279K inchange semiconductor
mmf60r280qth.pdf
isc N-Channel MOSFET Transistor MMF60R280QTH FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and
8.14. Size:279K inchange semiconductor
mmf60r190pth.pdf
isc N-Channel MOSFET Transistor MMF60R190PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.15. Size:200K inchange semiconductor
mmf60r360qth.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF60R360QTH FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters Adapter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.16. Size:279K inchange semiconductor
mmf60r190qth.pdf
isc N-Channel MOSFET Transistor MMF60R190QTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.17. Size:279K inchange semiconductor
mmf60r360pth.pdf
isc N-Channel MOSFET Transistor MMF60R360PTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.18. Size:279K inchange semiconductor
mmf60r290pth.pdf
isc N-Channel MOSFET Transistor MMF60R290PTH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.19. Size:279K inchange semiconductor
mmf60r580qth.pdf
isc N-Channel MOSFET Transistor MMF60R580QTH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.20. Size:199K inchange semiconductor
mmf60r580p.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF60R580P FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
Otros transistores... MME60R290PRH, MME70R380PRH, MMF50R280PTH, MMF60R115PTH, MMF60R190PTH, MMF60R290PTH, MMF60R360PTH, MMF60R580PTH, IRLB3034, MMF65R190PTH, MMF70R600PTH, MMF70R900PTH, MMF80R1K2PTH, MMF80R900PTH, MMFT107T1, MMFT2406T1, MMFT2955ET1
