MMF60R750PTH - описание и поиск аналогов

 ..1. Size:1049K  magnachip
 mmf60r750pth.pdf 

MMF60R750P Datasheet 1 MMF60R750P 600V 0.75 N-channel MOSFET Description MMF60R750P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 ..2. Size:279K  inchange semiconductor
 mmf60r750pth.pdf 

isc N-Channel MOSFET Transistor MMF60R750PTH FEATURES Drain Current I = 5.7A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.1. Size:1167K  1
 mmf60r280q.pdf 

MMF60R280Q Datasheet MMF60R280Q 600V 0.28 N-channel MOSFET Description MMF60R280Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.2. Size:1156K  magnachip
 mmf60r580pth.pdf 

MMF60R580P Datasheet MMF60R580P 600V 0.58 N-channel MOSFET Description MMF60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.3. Size:1287K  magnachip
 mmf60r115pth.pdf 

MMF60R115P Datasheet MMF60R115P 600V 0.115 N-channel MOSFET Description MMF60R115P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.4. Size:1231K  magnachip
 mmf60r280qbth.pdf 

MMF60R280QB Datasheet MMF60R280QB 600V 0.28 N-channel MOSFET Description MMF60R280QB is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 8.5. Size:1243K  magnachip
 mmf60r190pth.pdf 

MMF60R190P Datasheet MMF60R190P 600V 0.19 N-channel MOSFET Description MMF60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.6. Size:1588K  magnachip
 mmf60r190qth.pdf 

MMF60R190Q Datasheet MMF60R190Q 600V 0.19 N-channel MOSFET Description MMF60R190Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.7. Size:1268K  magnachip
 mmf60r360pth.pdf 

MMF60R360P Datasheet MMF60R360P 600V 0.36 N-channel MOSFET Description MMF60R360P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.8. Size:1130K  magnachip
 mmf60r290pth.pdf 

MMF60R290P Datasheet MMF60R290P 600V 0.29 N-channel MOSFET Description MMF60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.9. Size:1563K  magnachip
 mmf60r580qth.pdf 

MMF60R580Q Datasheet MMF60R580Q 600V 0.58 N-channel MOSFET Description MMF60R580Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.10. Size:1324K  magnachip
 mmf60r360q.pdf 

MMF60R360Q Datasheet MMF60R360Q 600V 0.36 N-channel MOSFET Description MMF60R360Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.11. Size:279K  inchange semiconductor
 mmf60r580pth.pdf 

isc N-Channel MOSFET Transistor MMF60R580PTH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.12. Size:279K  inchange semiconductor
 mmf60r115pth.pdf 

isc N-Channel MOSFET Transistor MMF60R115PTH FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.115 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.13. Size:279K  inchange semiconductor
 mmf60r280qth.pdf 

isc N-Channel MOSFET Transistor MMF60R280QTH FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 8.14. Size:279K  inchange semiconductor
 mmf60r190pth.pdf 

isc N-Channel MOSFET Transistor MMF60R190PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.15. Size:200K  inchange semiconductor
 mmf60r360qth.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF60R360QTH FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters Adapter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 8.16. Size:279K  inchange semiconductor
 mmf60r190qth.pdf 

isc N-Channel MOSFET Transistor MMF60R190QTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.17. Size:279K  inchange semiconductor
 mmf60r360pth.pdf 

isc N-Channel MOSFET Transistor MMF60R360PTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.18. Size:279K  inchange semiconductor
 mmf60r290pth.pdf 

isc N-Channel MOSFET Transistor MMF60R290PTH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.19. Size:279K  inchange semiconductor
 mmf60r580qth.pdf 

isc N-Channel MOSFET Transistor MMF60R580QTH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.20. Size:199K  inchange semiconductor
 mmf60r580p.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF60R580P FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V