MMF65R190PTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMF65R190PTH
Código: 65R190P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 34 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 53 nC
Tiempo de subida (tr): 75 nS
Conductancia de drenaje-sustrato (Cd): 1425 pF
Resistencia entre drenaje y fuente RDS(on): 0.19 Ohm
Paquete / Cubierta: TO-220F
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MMF65R190PTH Datasheet (PDF)
mmf65r190pth.pdf
MMF65R190P Datasheet MMF65R190P 650V 0.19 N-channel MOSFET Description MMF65R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf65r190pth.pdf
isc N-Channel MOSFET Transistor MMF65R190PTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mmf65r190p.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF65R190PFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
mmf65r600qth.pdf
MMF65R600Q Datasheet MMF65R600Q 650V 0.60 N-channel MOSFET Description MMF65R600Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf65r600qth.pdf
isc N-Channel MOSFET Transistor MMF65R600QTHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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