MMF65R190PTH. Аналоги и основные параметры

Наименование производителя: MMF65R190PTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 34 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 75 ns

Cossⓘ - Выходная емкость: 1425 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: TO-220F

Аналог (замена) для MMF65R190PTH

- подборⓘ MOSFET транзистора по параметрам

 

MMF65R190PTH даташит

 ..1. Size:1206K  magnachip
 mmf65r190pth.pdf pdf_icon

MMF65R190PTH

MMF65R190P Datasheet MMF65R190P 650V 0.19 N-channel MOSFET Description MMF65R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:279K  inchange semiconductor
 mmf65r190pth.pdf pdf_icon

MMF65R190PTH

isc N-Channel MOSFET Transistor MMF65R190PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 4.1. Size:199K  inchange semiconductor
 mmf65r190p.pdf pdf_icon

MMF65R190PTH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF65R190P FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 8.1. Size:1611K  magnachip
 mmf65r600qth.pdf pdf_icon

MMF65R190PTH

MMF65R600Q Datasheet MMF65R600Q 650V 0.60 N-channel MOSFET Description MMF65R600Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

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