MMF70R600PTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMF70R600PTH
Código: 70R600P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 28.7 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 23 nC
Tiempo de subida (tr): 27.6 nS
Conductancia de drenaje-sustrato (Cd): 34.9 pF
Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET MMF70R600PTH
MMF70R600PTH Datasheet (PDF)
mmf70r600pth.pdf
MMF70R600P Datasheet MMF70R600P 700V 0.6 N-channel MOSFET Description MMF70R600P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmf70r600pth.pdf
isc N-Channel MOSFET Transistor MMF70R600PTHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mmf70r600p.pdf
isc N-Channel MOSFET Transistor MMF70R600PFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
mmf70r900pth.pdf
MMF70R900P Datasheet MMF70R900P 700V 0.9 N-channel MOSFET Description MMF70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmf70r900pth.pdf
isc N-Channel MOSFET Transistor MMF70R900PTHFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HFS4N90
