MMF70R600PTH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MMF70R600PTH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 28.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 27.6 ns
Cossⓘ - Выходная емкость: 34.9 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO-220F
- подбор MOSFET транзистора по параметрам
MMF70R600PTH Datasheet (PDF)
mmf70r600pth.pdf

MMF70R600P Datasheet MMF70R600P 700V 0.6 N-channel MOSFET Description MMF70R600P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmf70r600pth.pdf

isc N-Channel MOSFET Transistor MMF70R600PTHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mmf70r600p.pdf

isc N-Channel MOSFET Transistor MMF70R600PFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
mmf70r900pth.pdf

MMF70R900P Datasheet MMF70R900P 700V 0.9 N-channel MOSFET Description MMF70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: MTM45N05E | DG840 | IRLU3715 | SDF120JDA-D | KNB1906A | FDPF8N50NZU | IPD60R280PFD7S
History: MTM45N05E | DG840 | IRLU3715 | SDF120JDA-D | KNB1906A | FDPF8N50NZU | IPD60R280PFD7S



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