MMF70R600PTH. Аналоги и основные параметры
Наименование производителя: MMF70R600PTH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 28.7 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 27.6 ns
Cossⓘ - Выходная емкость: 34.9 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MMF70R600PTH
- подборⓘ MOSFET транзистора по параметрам
MMF70R600PTH даташит
mmf70r600pth.pdf
MMF70R600P Datasheet MMF70R600P 700V 0.6 N-channel MOSFET Description MMF70R600P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmf70r600pth.pdf
isc N-Channel MOSFET Transistor MMF70R600PTH FEATURES Drain Current I = 7.3A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
mmf70r600p.pdf
isc N-Channel MOSFET Transistor MMF70R600P FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
mmf70r900pth.pdf
MMF70R900P Datasheet MMF70R900P 700V 0.9 N-channel MOSFET Description MMF70R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
Другие IGBT... MMF50R280PTH, MMF60R115PTH, MMF60R190PTH, MMF60R290PTH, MMF60R360PTH, MMF60R580PTH, MMF60R750PTH, MMF65R190PTH, IRFB7545, MMF70R900PTH, MMF80R1K2PTH, MMF80R900PTH, MMFT107T1, MMFT2406T1, MMFT2955ET1, MMFT2N02ELT1, MMFT5P03HDT1
History: SQ2301ES | PSMN008-75B | AOT9N50
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