MMF70R600PTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MMF70R600PTH
Маркировка: 70R600P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 28.7 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 7.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 23 nC
Время нарастания (tr): 27.6 ns
Выходная емкость (Cd): 34.9 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MMF70R600PTH
MMF70R600PTH Datasheet (PDF)
mmf70r600pth.pdf
MMF70R600P Datasheet MMF70R600P 700V 0.6 N-channel MOSFET Description MMF70R600P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmf70r600pth.pdf
isc N-Channel MOSFET Transistor MMF70R600PTHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mmf70r600p.pdf
isc N-Channel MOSFET Transistor MMF70R600PFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
mmf70r900pth.pdf
MMF70R900P Datasheet MMF70R900P 700V 0.9 N-channel MOSFET Description MMF70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmf70r900pth.pdf
isc N-Channel MOSFET Transistor MMF70R900PTHFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
