MMF70R900PTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMF70R900PTH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: TO-220F

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MMF70R900PTH datasheet

 ..1. Size:1194K  magnachip
mmf70r900pth.pdf pdf_icon

MMF70R900PTH

MMF70R900P Datasheet MMF70R900P 700V 0.9 N-channel MOSFET Description MMF70R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 ..2. Size:279K  inchange semiconductor
mmf70r900pth.pdf pdf_icon

MMF70R900PTH

isc N-Channel MOSFET Transistor MMF70R900PTH FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.1. Size:1174K  magnachip
mmf70r600pth.pdf pdf_icon

MMF70R900PTH

MMF70R600P Datasheet MMF70R600P 700V 0.6 N-channel MOSFET Description MMF70R600P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.2. Size:255K  inchange semiconductor
mmf70r600p.pdf pdf_icon

MMF70R900PTH

isc N-Channel MOSFET Transistor MMF70R600P FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

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