MMF70R900PTH. Аналоги и основные параметры

Наименование производителя: MMF70R900PTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 22 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 330 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm

Тип корпуса: TO-220F

Аналог (замена) для MMF70R900PTH

- подборⓘ MOSFET транзистора по параметрам

 

MMF70R900PTH даташит

 ..1. Size:1194K  magnachip
 mmf70r900pth.pdf pdf_icon

MMF70R900PTH

MMF70R900P Datasheet MMF70R900P 700V 0.9 N-channel MOSFET Description MMF70R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 ..2. Size:279K  inchange semiconductor
 mmf70r900pth.pdf pdf_icon

MMF70R900PTH

isc N-Channel MOSFET Transistor MMF70R900PTH FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.1. Size:1174K  magnachip
 mmf70r600pth.pdf pdf_icon

MMF70R900PTH

MMF70R600P Datasheet MMF70R600P 700V 0.6 N-channel MOSFET Description MMF70R600P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.2. Size:255K  inchange semiconductor
 mmf70r600p.pdf pdf_icon

MMF70R900PTH

isc N-Channel MOSFET Transistor MMF70R600P FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

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