MMFT60R115PCTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMFT60R115PCTH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 255 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 114 nS
Cossⓘ - Capacitancia de salida: 1770 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
Encapsulados: TO-220F
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MMFT60R115PCTH datasheet
mmft60r115pcth.pdf
MMFT60R115PC Datasheet MMFT60R115PC 600V 0.115 N-channel MOSFET Description MMFT60R115PC is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we
mmft60r115pcth.pdf
isc N-Channel MOSFET Transistor MMFT60R115PCTH FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.115 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and
mmft60r195pth.pdf
MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmft60r195pcth.pdf
MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we
Otros transistores... MMF70R900PTH, MMF80R1K2PTH, MMF80R900PTH, MMFT107T1, MMFT2406T1, MMFT2955ET1, MMFT2N02ELT1, MMFT5P03HDT1, IRFP064N, MMFT60R195PTH, MMFT60R290PCTH, MMFT60R290PTH, MMFT60R380PCTH, MMFT60R380PTH, MMFT65R195PTH, MMFT70R380PTH, MMFTP84
History: NVMFS5C456N
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