Справочник MOSFET. MMFT60R115PCTH

 

MMFT60R115PCTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMFT60R115PCTH
   Маркировка: 60R115PC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 255 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 77 nC
   trⓘ - Время нарастания: 114 ns
   Cossⓘ - Выходная емкость: 1770 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для MMFT60R115PCTH

 

 

MMFT60R115PCTH Datasheet (PDF)

 ..1. Size:1291K  magnachip
 mmft60r115pcth.pdf

MMFT60R115PCTH MMFT60R115PCTH

MMFT60R115PC Datasheet MMFT60R115PC 600V 0.115 N-channel MOSFET Description MMFT60R115PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 ..2. Size:279K  inchange semiconductor
 mmft60r115pcth.pdf

MMFT60R115PCTH MMFT60R115PCTH

isc N-Channel MOSFET Transistor MMFT60R115PCTHFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.115(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 6.1. Size:1413K  magnachip
 mmft60r195pth.pdf

MMFT60R115PCTH MMFT60R115PCTH

MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 6.2. Size:1295K  magnachip
 mmft60r195pcth.pdf

MMFT60R115PCTH MMFT60R115PCTH

MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 6.3. Size:279K  inchange semiconductor
 mmft60r195pth.pdf

MMFT60R115PCTH MMFT60R115PCTH

isc N-Channel MOSFET Transistor MMFT60R195PTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 6.4. Size:279K  inchange semiconductor
 mmft60r195pcth.pdf

MMFT60R115PCTH MMFT60R115PCTH

isc N-Channel MOSFET Transistor MMFT60R195PCTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

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