MMFT60R195PTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMFT60R195PTH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73 nS

Cossⓘ - Capacitancia de salida: 1250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.195 Ohm

Encapsulados: TO-220F

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MMFT60R195PTH datasheet

 ..1. Size:1413K  magnachip
 mmft60r195pth.pdf pdf_icon

MMFT60R195PTH

MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 ..2. Size:279K  inchange semiconductor
 mmft60r195pth.pdf pdf_icon

MMFT60R195PTH

isc N-Channel MOSFET Transistor MMFT60R195PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.195 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 3.1. Size:1295K  magnachip
 mmft60r195pcth.pdf pdf_icon

MMFT60R195PTH

MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 3.2. Size:279K  inchange semiconductor
 mmft60r195pcth.pdf pdf_icon

MMFT60R195PTH

isc N-Channel MOSFET Transistor MMFT60R195PCTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.195 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

MOSTRAR MÁS

Otros transistores... MMF80R1K2PTH, MMF80R900PTH, MMFT107T1, MMFT2406T1, MMFT2955ET1, MMFT2N02ELT1, MMFT5P03HDT1, MMFT60R115PCTH, AO4468, MMFT60R290PCTH, MMFT60R290PTH, MMFT60R380PCTH, MMFT60R380PTH, MMFT65R195PTH, MMFT70R380PTH, MMFTP84, MMIS60R580PTH