MMFT70R380PTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMFT70R380PTH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 823 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO-220F
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MMFT70R380PTH Datasheet (PDF)
mmft70r380pth.pdf

MMFT70R380P Datasheet MMFT70R380P 700V 0.38 N-channel MOSFET Description MMFT70R380P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
mmft70r380pth.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MMFT70R380PTHFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
Otros transistores... MMFT5P03HDT1 , MMFT60R115PCTH , MMFT60R195PTH , MMFT60R290PCTH , MMFT60R290PTH , MMFT60R380PCTH , MMFT60R380PTH , MMFT65R195PTH , IRF840 , MMFTP84 , MMIS60R580PTH , MMIS60R750PTH , MMIS60R900PTH , MMIS70H900QTH , MMIS70R1K4PTH , MMIS70R900PTH , MMIX1F132N50P3 .
History: TPCA8A08-H | NTMFS5C646N | 2SK3487 | UT3N06G-AE3-R | STU75N3LLH6 | IPB80N04S4-04 | GP2M002A060XG
History: TPCA8A08-H | NTMFS5C646N | 2SK3487 | UT3N06G-AE3-R | STU75N3LLH6 | IPB80N04S4-04 | GP2M002A060XG



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