MMFTP84 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMFTP84
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 3 nS
Cossⓘ - Capacitancia de salida: 25 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MMFTP84 MOSFET
MMFTP84 datasheet
mmftp84.pdf
MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor Features Low threshold voltage Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Applications Line current interrupter in telephone sets Relay, high speed and line transformer drivers Caution The device i
mmftp84w.pdf
MMFTP84W P-Channel Enhancement Mode Vertical D-MOS Transistor Features Low threshold voltage Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Applications Line current interrupter in telephone sets Relay, high speed and line transformer drivers Caution The device
mmftp3401.pdf
MMFTP3401 P-Channel Enhancement Mode MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS 12 V Drain Current T = 25 4 A -ID A 3.2 T = 70 A Peak Drain Current 1) -IDM 27 A Power Dissipation 2) T = 25 A 1.4 PD W 0.9 T = 70 A Junction and St
Otros transistores... MMFT60R115PCTH , MMFT60R195PTH , MMFT60R290PCTH , MMFT60R290PTH , MMFT60R380PCTH , MMFT60R380PTH , MMFT65R195PTH , MMFT70R380PTH , IRF540N , MMIS60R580PTH , MMIS60R750PTH , MMIS60R900PTH , MMIS70H900QTH , MMIS70R1K4PTH , MMIS70R900PTH , MMIX1F132N50P3 , MMIX1F160N30T .
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