MMFTP84
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMFTP84
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 0.13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
tonⓘ - Turn-on Time: 3
nS
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 10
Ohm
Package:
SOT-23
MMFTP84
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMFTP84
Datasheet (PDF)
..1. Size:226K semtech
mmftp84.pdf
MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor Features Low threshold voltage Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown 1. Gate 2. Source 3. DrainSOT-23 Plastic PackageApplications Line current interrupter in telephone sets Relay, high speed and line transformer drivers Caution The device i
0.1. Size:464K semtech
mmftp84w.pdf
MMFTP84W P-Channel Enhancement Mode Vertical D-MOS Transistor Features Low threshold voltage Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown 1. Gate 2. Source 3. Drain SOT-323 Plastic PackageApplications Line current interrupter in telephone sets Relay, high speed and line transformer drivers Caution The device
9.1. Size:428K semtech
mmftp3401.pdf
MMFTP3401 P-Channel Enhancement Mode MOSFET 1. Gate 2. Source 3. DrainTO-236 Plastic PackageAbsolute Maximum Ratings Parameter Symbol Value UnitDrain-Source Voltage -VDS 30 VGate-Source Voltage VGS 12 VDrain Current T = 25 4 A-ID A 3.2 T = 70 APeak Drain Current 1) -IDM 27 APower Dissipation 2) T = 25A1.4 PD W 0.9 T = 70AJunction and St
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