MMIS60R900PTH Todos los transistores

 

MMIS60R900PTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMIS60R900PTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 306 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO-251
 

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MMIS60R900PTH Datasheet (PDF)

 ..1. Size:1149K  magnachip
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MMIS60R900PTH

MMIS60R900P Datasheet MMIS60R900P 600V 0.9 N-channel MOSFET Description MMIS60R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 7.1. Size:1191K  magnachip
 mmis60r580pth.pdf pdf_icon

MMIS60R900PTH

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 7.2. Size:1257K  magnachip
 mmis60r750pth.pdf pdf_icon

MMIS60R900PTH

MMIS60R750P Datasheet MMIS60R750P 600V 0.75 N-channel MOSFET Description MMIS60R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 7.3. Size:1038K  magnachip
 mmis60r580p.pdf pdf_icon

MMIS60R900PTH

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

MOSTRAR MÁS

Otros transistores... MMFT60R290PTH , MMFT60R380PCTH , MMFT60R380PTH , MMFT65R195PTH , MMFT70R380PTH , MMFTP84 , MMIS60R580PTH , MMIS60R750PTH , IRF640 , MMIS70H900QTH , MMIS70R1K4PTH , MMIS70R900PTH , MMIX1F132N50P3 , MMIX1F160N30T , MMIX1F180N25T , MMIX1F210N30P3 , MMIX1F230N20T .

History: AOB409L | HTD2K4P15T | SHD225628 | NTJS4405NT1 | HM1607D | NCE85H21C

 

 
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