MMIS60R900PTH Specs and Replacement

Type Designator: MMIS60R900PTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 306 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-251

MMIS60R900PTH substitution

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MMIS60R900PTH datasheet

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MMIS60R900PTH

MMIS60R900P Datasheet MMIS60R900P 600V 0.9 N-channel MOSFET Description MMIS60R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as... See More ⇒

 7.1. Size:1191K  magnachip
 mmis60r580pth.pdf pdf_icon

MMIS60R900PTH

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well ... See More ⇒

 7.2. Size:1257K  magnachip
 mmis60r750pth.pdf pdf_icon

MMIS60R900PTH

MMIS60R750P Datasheet MMIS60R750P 600V 0.75 N-channel MOSFET Description MMIS60R750P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a... See More ⇒

 7.3. Size:1038K  magnachip
 mmis60r580p.pdf pdf_icon

MMIS60R900PTH

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well ... See More ⇒

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Detailed specifications: MMFT60R290PTH, MMFT60R380PCTH, MMFT60R380PTH, MMFT65R195PTH, MMFT70R380PTH, MMFTP84, MMIS60R580PTH, MMIS60R750PTH, IRFP460, MMIS70H900QTH, MMIS70R1K4PTH, MMIS70R900PTH, MMIX1F132N50P3, MMIX1F160N30T, MMIX1F180N25T, MMIX1F210N30P3, MMIX1F230N20T

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