MMIS70R1K4PTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMIS70R1K4PTH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO-251

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MMIS70R1K4PTH datasheet

 ..1. Size:1293K  magnachip
 mmis70r1k4pth.pdf pdf_icon

MMIS70R1K4PTH

MMIS70R1K4P Datasheet MMIS70R1K4P 700V 1.4 N-channel MOSFET Description MMIS70R1K4P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 7.1. Size:1172K  magnachip
 mmis70r900pth.pdf pdf_icon

MMIS70R1K4PTH

MMIS70R900P Datasheet MMIS70R900P 700V 0.9 N-channel MOSFET Description MMIS70R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 7.2. Size:214K  inchange semiconductor
 mmis70r900pth.pdf pdf_icon

MMIS70R1K4PTH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMIS70R900PTH FEATURES With TO-251(IPAK) packaging Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications DC DC Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.1. Size:1096K  magnachip
 mmis70h900qth.pdf pdf_icon

MMIS70R1K4PTH

MMIS70H900Q Datasheet MMIS70H900Q 700V 1.4 N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

MOSTRAR MÁS

Otros transistores... MMFT60R380PTH, MMFT65R195PTH, MMFT70R380PTH, MMFTP84, MMIS60R580PTH, MMIS60R750PTH, MMIS60R900PTH, MMIS70H900QTH, IRF640, MMIS70R900PTH, MMIX1F132N50P3, MMIX1F160N30T, MMIX1F180N25T, MMIX1F210N30P3, MMIX1F230N20T, MMIX1F360N15T2, MMIX1F40N110P