All MOSFET. MMIS70R1K4PTH Datasheet

 

MMIS70R1K4PTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMIS70R1K4PTH
   Marking Code: 70R1K4P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-251

 MMIS70R1K4PTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMIS70R1K4PTH Datasheet (PDF)

 ..1. Size:1293K  magnachip
 mmis70r1k4pth.pdf

MMIS70R1K4PTH MMIS70R1K4PTH

MMIS70R1K4P Datasheet MMIS70R1K4P 700V 1.4 N-channel MOSFET Description MMIS70R1K4P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 7.1. Size:1172K  magnachip
 mmis70r900pth.pdf

MMIS70R1K4PTH MMIS70R1K4PTH

MMIS70R900P Datasheet MMIS70R900P 700V 0.9 N-channel MOSFET Description MMIS70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 7.2. Size:214K  inchange semiconductor
 mmis70r900pth.pdf

MMIS70R1K4PTH MMIS70R1K4PTH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMIS70R900PTHFEATURESWith TO-251(IPAK) packagingLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsDC DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.1. Size:1096K  magnachip
 mmis70h900qth.pdf

MMIS70R1K4PTH MMIS70R1K4PTH

MMIS70H900Q Datasheet MMIS70H900Q 700V 1.4 N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOC3870A | MTP9435L3

 

 
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