MMIX1F44N100Q3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMIX1F44N100Q3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 694 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 6.5 VQgⓘ - Carga de la puerta: 264 nC
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 1046 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.245 Ohm
Paquete / Cubierta: ISOLATED TAB
Búsqueda de reemplazo de MOSFET MMIX1F44N100Q3
MMIX1F44N100Q3 Datasheet (PDF)
mmix1f44n100q3.pdf
Advance Technical InformationHiperFETTM VDSS = 1000VMMIX1F44N100Q3Power MOSFET ID25 = 30A Q3-Class RDS(on) 245m trr 300ns(Electrically Isolated Tab)DN-Channel Enhancement ModeFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 V Isolated TabVDGR TJ = 25C to 150
mmix1f420n10t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab
mmix1f40n110p.pdf
Advance Technical InformationPolarTM HiperFETTM VDSS = 1100VMMIX1F40N110PPower MOSFET ID25 = 24A RDS(on) 290m (Electrically Isolated Tab)trr 300nsDN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1100 V Isolated TabVDGR TJ
mmix1f360n15t2.pdf
Preliminary Technical InformationTrenchT2TM GigaMOSTMVDSS = 150VMMIX1F360N15T2HiperFETTMID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C
mmix1f132n50p3.pdf
Advance Technical InformationPolar3TM HiPerFETTM VDSS = 500VMMIX1F132N50P3Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250nsDN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V Isolated TabVDGR TJ =
mmix1f180n25t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 250VMMIX1F180N25THiperFETTMID25 = 130A Power MOSFET RDS(on) 13m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 250 VV
mmix1f210n30p3.pdf
Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VMMIX1F210N30P3Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab)trr 250nsN-Channel Enhancement ModeDAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 V Isolated TabVDGR TJ
mmix1f230n20t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 200VMMIX1F230N20THiperFETTMID25 = 168A Power MOSFET RDS(on) 8.3m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C 200 V
mmix1f160n30t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 300VMMIX1F160N30THiperFETTMID25 = 102A Power MOSFET RDS(on) 20m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 300 VV
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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