MMIX1F44N100Q3 Specs and Replacement
Type Designator: MMIX1F44N100Q3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 694 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1046 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.245 Ohm
Package: ISOLATED TAB
MMIX1F44N100Q3 substitution
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MMIX1F44N100Q3 datasheet
mmix1f420n10t.pdf
Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V Isolated Tab ... See More ⇒
mmix1f40n110p.pdf
Advance Technical Information PolarTM HiperFETTM VDSS = 1100V MMIX1F40N110P Power MOSFET ID25 = 24A RDS(on) 290m (Electrically Isolated Tab) trr 300ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1100 V Isolated Tab VDGR TJ ... See More ⇒
mmix1f360n15t2.pdf
Preliminary Technical Information TrenchT2TM GigaMOSTM VDSS = 150V MMIX1F360N15T2 HiperFETTM ID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 175 C ... See More ⇒
Detailed specifications: MMIX1F132N50P3, MMIX1F160N30T, MMIX1F180N25T, MMIX1F210N30P3, MMIX1F230N20T, MMIX1F360N15T2, MMIX1F40N110P, MMIX1F420N10T, AON6414A, MML60R190PTH, MML60R290PTH, MML65R190PTH, MMN2302, MMN2312, MMN25N03, MMN3205, MMN3220
Keywords - MMIX1F44N100Q3 MOSFET specs
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MMIX1F44N100Q3 replacement
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