MMN404 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMN404

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO-252

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MMN404 datasheet

 ..1. Size:147K  m-mos
 mmn404.pdf pdf_icon

MMN404

MMN404 Preliminary Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@20A = 7m RDS(ON), Vgs@4.5V, Ids@20A = 8m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current D-PAK Internal Schematic Diagram Drain Gate Source

 9.1. Size:525K  macmic
 mmn400a010u1.pdf pdf_icon

MMN404

MMN400A010U1 100V 400A N-ch Power MOSFET Module August 2016 Preliminary RoHS Compliant PRODUCT FEATURES RDS(ON).typ=1.1m @VGS=10V 175 operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance 2.2 APPLICATIONS High efficiency

 9.2. Size:618K  macmic
 mmn400a006u1.pdf pdf_icon

MMN404

MMN400A006U1 60V 400A N-ch Power MOSFET Module August 2016 Preliminary RoHS Compliant PRODUCT FEATURES RDS(ON).typ=0.35m @VGS=10V 175 operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance 2.2 APPLICATIONS High efficiency

Otros transistores... MML65R190PTH, MMN2302, MMN2312, MMN25N03, MMN3205, MMN3220, MMN3400, MMN35N03, STP75NF75, MMN4307, MMN4326, MMN4336, MMN4338, MMN4364DY, MMN4410, MMN4414, MMN4418