MMN4307 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMN4307

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.68 nS

Cossⓘ - Capacitancia de salida: 322.62 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm

Encapsulados: SOP-8

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MMN4307 datasheet

 ..1. Size:160K  m-mos
 mmn4307.pdf pdf_icon

MMN4307

MMN4307 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@14A = 7.8m RDS(ON), Vgs@4.5V, Ids@14A = 11.5m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET

 9.1. Size:185K  m-mos
 mmn4364dy.pdf pdf_icon

MMN4307

MMN4364DY Preliminary Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@20A = 5.5m RDS(ON), Vgs@4.5V, Ids@19A = 6.5m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current SO-8 Internal Schematic Diagram Drain Gate

 9.2. Size:218K  m-mos
 mmn4338.pdf pdf_icon

MMN4307

MMN4338 Preliminary Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@4.9A = 42m RDS(ON), Vgs@4.5V, Ids@4.1A = 65m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET Maximum

 9.3. Size:292K  m-mos
 mmn4326.pdf pdf_icon

MMN4307

MMN4326 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@8.5A = 41m RDS(ON), Vgs@4.5V, Ids@8.5A = 45m RDS(ON), Vgs@2.5V, Ids@5.0A = 59m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain Gate Source Top View

MOSTRAR MÁS

Otros transistores... MMN2302, MMN2312, MMN25N03, MMN3205, MMN3220, MMN3400, MMN35N03, MMN404, 2N7002, MMN4326, MMN4336, MMN4338, MMN4364DY, MMN4410, MMN4414, MMN4418, MMN4422