MMN4307 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMN4307
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.68 nS
Cossⓘ - Capacitancia de salida: 322.62 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MMN4307 MOSFET
MMN4307 Datasheet (PDF)
mmn4307.pdf

MMN4307Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@14A = 7.8mRDS(ON), Vgs@4.5V, Ids@14A = 11.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFET
mmn4364dy.pdf

MMN4364DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 5.5mRDS(ON), Vgs@4.5V, Ids@19A = 6.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate
mmn4338.pdf

MMN4338Preliminary Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@4.9A = 42mRDS(ON), Vgs@4.5V, Ids@4.1A = 65mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum
mmn4326.pdf

MMN4326Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@8.5A = 41mRDS(ON), Vgs@4.5V, Ids@8.5A = 45mRDS(ON), Vgs@2.5V, Ids@5.0A = 59mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View
Otros transistores... MMN2302 , MMN2312 , MMN25N03 , MMN3205 , MMN3220 , MMN3400 , MMN35N03 , MMN404 , K3569 , MMN4326 , MMN4336 , MMN4338 , MMN4364DY , MMN4410 , MMN4414 , MMN4418 , MMN4422 .
History: DCC060M65G2 | CTU20N700 | YJD80N03B | SVF6N60DTR | RRH050P03 | AP4503GM-HF | NVMFD024N06C
History: DCC060M65G2 | CTU20N700 | YJD80N03B | SVF6N60DTR | RRH050P03 | AP4503GM-HF | NVMFD024N06C



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