MMN4414 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMN4414

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.12 nS

Cossⓘ - Capacitancia de salida: 86.16 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: SOP-8

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MMN4414 datasheet

 ..1. Size:205K  m-mos
 mmn4414.pdf pdf_icon

MMN4414

MMN4414 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A = 26m RDS(ON), Vgs@4.5V, Ids@5A = 40m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET Maximum Ratings and Thermal C

 8.1. Size:198K  m-mos
 mmn4410.pdf pdf_icon

MMN4414

MMN4410 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@18A = 5.5m RDS(ON), Vgs@4.5V, Ids@15A = 6.2m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET

 8.2. Size:190K  m-mos
 mmn4418.pdf pdf_icon

MMN4414

MMN4418 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@10A = 17m RDS(ON), Vgs@4.5V, Ids@5A = 50m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current SO-8 Internal Schematic Diagram Drain Gate Source Top View

 9.1. Size:162K  m-mos
 mmn4422.pdf pdf_icon

MMN4414

MMN4422 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@11A = 15m RDS(ON), Vgs@4.5V, Ids@9A = 24m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET Ma

MOSTRAR MÁS

Otros transistores... MMN35N03, MMN404, MMN4307, MMN4326, MMN4336, MMN4338, MMN4364DY, MMN4410, IRFP260, MMN4418, MMN4422, MMN4430, MMN4444, MMN4446, MMN45N03, MMN4818, MMN4942DY