All MOSFET. MMN4414 Datasheet

 

MMN4414 Datasheet and Replacement


   Type Designator: MMN4414
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.12 nS
   Cossⓘ - Output Capacitance: 86.16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOP-8
 

 MMN4414 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MMN4414 Datasheet (PDF)

 ..1. Size:205K  m-mos
 mmn4414.pdf pdf_icon

MMN4414

MMN4414Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@5.8A = 26mRDS(ON), Vgs@4.5V, Ids@5A = 40mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum Ratings and Thermal C

 8.1. Size:198K  m-mos
 mmn4410.pdf pdf_icon

MMN4414

MMN4410Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@18A = 5.5mRDS(ON), Vgs@4.5V, Ids@15A = 6.2mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFET

 8.2. Size:190K  m-mos
 mmn4418.pdf pdf_icon

MMN4414

MMN4418Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@10A = 17mRDS(ON), Vgs@4.5V, Ids@5A = 50mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate Source Top View

 9.1. Size:162K  m-mos
 mmn4422.pdf pdf_icon

MMN4414

MMN4422Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@11A = 15mRDS(ON), Vgs@4.5V, Ids@9A = 24mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMa

SHOW MORE

Datasheet: MMN35N03 , MMN404 , MMN4307 , MMN4326 , MMN4336 , MMN4338 , MMN4364DY , MMN4410 , 8205A , MMN4418 , MMN4422 , MMN4430 , MMN4444 , MMN4446 , MMN45N03 , MMN4818 , MMN4942DY .

History: FTK2N65P

Keywords - MMN4414 MOSFET datasheet

 MMN4414 cross reference
 MMN4414 equivalent finder
 MMN4414 lookup
 MMN4414 substitution
 MMN4414 replacement

 

 
Back to Top

 


 
.