MMN4422 Todos los transistores

 

MMN4422 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMN4422
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 159.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: SOP-8
 

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MMN4422 Datasheet (PDF)

 ..1. Size:162K  m-mos
 mmn4422.pdf pdf_icon

MMN4422

MMN4422Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@11A = 15mRDS(ON), Vgs@4.5V, Ids@9A = 24mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMa

 9.1. Size:149K  m-mos
 mmn4446.pdf pdf_icon

MMN4422

MMN4446Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@15A = 9mRDS(ON), Vgs@4.5V, Ids@11A = 15mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate Source Top View

 9.2. Size:205K  m-mos
 mmn4414.pdf pdf_icon

MMN4422

MMN4414Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@5.8A = 26mRDS(ON), Vgs@4.5V, Ids@5A = 40mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum Ratings and Thermal C

 9.3. Size:201K  m-mos
 mmn4444.pdf pdf_icon

MMN4422

MMN4444Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 5.5mRDS(ON), Vgs@4.5V, Ids@15A = 7.0mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSOP-08 Internal Schematic DiagramDrain Gate Source Top

MOSTRAR MÁS

Otros transistores... MMN4307 , MMN4326 , MMN4336 , MMN4338 , MMN4364DY , MMN4410 , MMN4414 , MMN4418 , IRF9540N , MMN4430 , MMN4444 , MMN4446 , MMN45N03 , MMN4818 , MMN4942DY , MMN4946BEY , MMN55N03 .

History: AP18T20GH-HF | AUIRLU024N | 2SK2819 | FDMC7692 | IPB60R170CFD7 | NTMFS4C35N | MTM5N35

 

 
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