MMN4444 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMN4444

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.44 nS

Cossⓘ - Capacitancia de salida: 456.44 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: SOP-8

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MMN4444 datasheet

 ..1. Size:201K  m-mos
 mmn4444.pdf pdf_icon

MMN4444

MMN4444 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@20A = 5.5m RDS(ON), Vgs@4.5V, Ids@15A = 7.0m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current SOP-08 Internal Schematic Diagram Drain Gate Source Top

 8.1. Size:149K  m-mos
 mmn4446.pdf pdf_icon

MMN4444

MMN4446 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@15A = 9m RDS(ON), Vgs@4.5V, Ids@11A = 15m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current SO-8 Internal Schematic Diagram Drain Gate Source Top View

 9.1. Size:162K  m-mos
 mmn4422.pdf pdf_icon

MMN4444

MMN4422 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@11A = 15m RDS(ON), Vgs@4.5V, Ids@9A = 24m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET Ma

 9.2. Size:205K  m-mos
 mmn4414.pdf pdf_icon

MMN4444

MMN4414 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A = 26m RDS(ON), Vgs@4.5V, Ids@5A = 40m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET Maximum Ratings and Thermal C

MOSTRAR MÁS

Otros transistores... MMN4336, MMN4338, MMN4364DY, MMN4410, MMN4414, MMN4418, MMN4422, MMN4430, K4145, MMN4446, MMN45N03, MMN4818, MMN4942DY, MMN4946BEY, MMN55N03, MMN60NF06, MMN65N03