All MOSFET. MMN4444 Datasheet

 

MMN4444 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMN4444
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.48 nC
   trⓘ - Rise Time: 9.44 nS
   Cossⓘ - Output Capacitance: 456.44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOP-8

 MMN4444 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMN4444 Datasheet (PDF)

 ..1. Size:201K  m-mos
 mmn4444.pdf

MMN4444 MMN4444

MMN4444Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 5.5mRDS(ON), Vgs@4.5V, Ids@15A = 7.0mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSOP-08 Internal Schematic DiagramDrain Gate Source Top

 8.1. Size:149K  m-mos
 mmn4446.pdf

MMN4444 MMN4444

MMN4446Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@15A = 9mRDS(ON), Vgs@4.5V, Ids@11A = 15mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate Source Top View

 9.1. Size:162K  m-mos
 mmn4422.pdf

MMN4444 MMN4444

MMN4422Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@11A = 15mRDS(ON), Vgs@4.5V, Ids@9A = 24mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMa

 9.2. Size:205K  m-mos
 mmn4414.pdf

MMN4444 MMN4444

MMN4414Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@5.8A = 26mRDS(ON), Vgs@4.5V, Ids@5A = 40mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum Ratings and Thermal C

 9.3. Size:198K  m-mos
 mmn4410.pdf

MMN4444 MMN4444

MMN4410Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@18A = 5.5mRDS(ON), Vgs@4.5V, Ids@15A = 6.2mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFET

 9.4. Size:190K  m-mos
 mmn4418.pdf

MMN4444 MMN4444

MMN4418Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@10A = 17mRDS(ON), Vgs@4.5V, Ids@5A = 50mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate Source Top View

 9.5. Size:181K  m-mos
 mmn4430.pdf

MMN4444 MMN4444

MMN4430Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@18A = 6mRDS(ON), Vgs@4.5V, Ids@15A = 10mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate Source Top View

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK9575-100A

 

 
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