All MOSFET. MMN4444 Datasheet

 

MMN4444 Datasheet and Replacement


   Type Designator: MMN4444
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.44 nS
   Cossⓘ - Output Capacitance: 456.44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOP-8
 

 MMN4444 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MMN4444 Datasheet (PDF)

 ..1. Size:201K  m-mos
 mmn4444.pdf pdf_icon

MMN4444

MMN4444Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 5.5mRDS(ON), Vgs@4.5V, Ids@15A = 7.0mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSOP-08 Internal Schematic DiagramDrain Gate Source Top

 8.1. Size:149K  m-mos
 mmn4446.pdf pdf_icon

MMN4444

MMN4446Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@15A = 9mRDS(ON), Vgs@4.5V, Ids@11A = 15mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate Source Top View

 9.1. Size:162K  m-mos
 mmn4422.pdf pdf_icon

MMN4444

MMN4422Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@11A = 15mRDS(ON), Vgs@4.5V, Ids@9A = 24mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMa

 9.2. Size:205K  m-mos
 mmn4414.pdf pdf_icon

MMN4444

MMN4414Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@5.8A = 26mRDS(ON), Vgs@4.5V, Ids@5A = 40mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum Ratings and Thermal C

SHOW MORE

Datasheet: MMN4336 , MMN4338 , MMN4364DY , MMN4410 , MMN4414 , MMN4418 , MMN4422 , MMN4430 , K4145 , MMN4446 , MMN45N03 , MMN4818 , MMN4942DY , MMN4946BEY , MMN55N03 , MMN60NF06 , MMN65N03 .

History: MMN4430 | IRFH5206PBF

Keywords - MMN4444 MOSFET datasheet

 MMN4444 cross reference
 MMN4444 equivalent finder
 MMN4444 lookup
 MMN4444 substitution
 MMN4444 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.