MMN8818E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMN8818E Datasheet (PDF)

..1. Size:204K m-mos
mmn8818e.pdf pdf_icon

MMN8818EData SheetM-MOS Semiconductor Hong Kong Limited30V Dual N-Channel Enhancement-Mode MOSFETVDS= 30V ID= 7A ESD Protected Geat: 2000VRDS(ON), Vgs@10V, Ids@7A = 18mRDS(ON), Vgs@4.5V, Ids@5A = 20mRDS(ON), Vgs@2.5V, Ids@4A = 27mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capability

7.1. Size:161K m-mos
mmn8818n.pdf pdf_icon

MMN8818NPackage Data SheetM-MOS Semiconductor Hong Kong Limited30V Dual N-Channel Enhancement-Mode MOSFETVDS= 30V ID= 7A ESD Protected Gate: 2000VRDS(ON), Vgs@10V, Ids@7A = 18mRDS(ON), Vgs@4.5V, Ids@5A = 20mRDS(ON), Vgs@2.5V, Ids@4A = 27mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing cap

9.1. Size:204K m-mos
mmn8804.pdf pdf_icon

MMN8804Data SheetM-MOS Semiconductor Hong Kong Limited20V Dual N-Channel Enhancement-Mode MOSFETVDS= 20V ID= 8A ESD Protected Gate: 2000VRDS(ON), Vgs@10V, Ids@8A = 13mRDS(ON), Vgs@4.5V, Ids@5A = 14mRDS(ON), Vgs@2.5V, Ids@4A = 19mRDS(ON), Vgs@1.8V, Ids@3A = 27mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Po

9.2. Size:154K m-mos
mmn8822.pdf pdf_icon

MMN8822Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@10V, Ids@7A = 21mRDS(ON), Vgs@4.5V, Ids@6.6A = 24mRDS(ON), Vgs@2.5V, Ids@5.5A = 32mRDS(ON), Vgs@1.8V, Ids@2A = 50mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceIdeal for Li ion battery pack application

Otros transistores... MMN6968E , MMN7230 , MMN7402 , MMN75N03 , MMN8205 , MMN8218 , MMN8220 , MMN8804 , STF13NM60N , MMN8818N , MMN8822 , MMN9926 , MMN9926BDY , MMN9926E , MMP2301 , MMP2311 , MMP2323 .