MMN8818E Specs and Replacement

Type Designator: MMN8818E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.402 nS

Cossⓘ - Output Capacitance: 64.325 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TSSOP-8

MMN8818E substitution

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MMN8818E datasheet

 ..1. Size:204K  m-mos
 mmn8818e.pdf pdf_icon

MMN8818E

MMN8818E Data Sheet M-MOS Semiconductor Hong Kong Limited 30V Dual N-Channel Enhancement-Mode MOSFET VDS= 30V ID= 7A ESD Protected Geat 2000V RDS(ON), Vgs@10V, Ids@7A = 18m RDS(ON), Vgs@4.5V, Ids@5A = 20m RDS(ON), Vgs@2.5V, Ids@4A = 27m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability ... See More ⇒

 7.1. Size:161K  m-mos
 mmn8818n.pdf pdf_icon

MMN8818E

MMN8818N Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V Dual N-Channel Enhancement-Mode MOSFET VDS= 30V ID= 7A ESD Protected Gate 2000V RDS(ON), Vgs@10V, Ids@7A = 18m RDS(ON), Vgs@4.5V, Ids@5A = 20m RDS(ON), Vgs@2.5V, Ids@4A = 27m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing cap... See More ⇒

 9.1. Size:204K  m-mos
 mmn8804.pdf pdf_icon

MMN8818E

MMN8804 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V ID= 8A ESD Protected Gate 2000V RDS(ON), Vgs@10V, Ids@8A = 13m RDS(ON), Vgs@4.5V, Ids@5A = 14m RDS(ON), Vgs@2.5V, Ids@4A = 19m RDS(ON), Vgs@1.8V, Ids@3A = 27m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Po... See More ⇒

 9.2. Size:154K  m-mos
 mmn8822.pdf pdf_icon

MMN8818E

MMN8822 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@10V, Ids@7A = 21m RDS(ON), Vgs@4.5V, Ids@6.6A = 24m RDS(ON), Vgs@2.5V, Ids@5.5A = 32m RDS(ON), Vgs@1.8V, Ids@2A = 50m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack application... See More ⇒

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Detailed specifications: MMN6968E, MMN7230, MMN7402, MMN75N03, MMN8205, MMN8218, MMN8220, MMN8804, IRFP250, MMN8818N, MMN8822, MMN9926, MMN9926BDY, MMN9926E, MMP2301, MMP2311, MMP2323

Keywords - MMN8818E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.