MMN8822 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMN8822

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.03 nS

Cossⓘ - Capacitancia de salida: 126.53 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: SO-8 TSSOP-8

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MMN8822 datasheet

 ..1. Size:154K  m-mos
 mmn8822.pdf pdf_icon

MMN8822

MMN8822 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@10V, Ids@7A = 21m RDS(ON), Vgs@4.5V, Ids@6.6A = 24m RDS(ON), Vgs@2.5V, Ids@5.5A = 32m RDS(ON), Vgs@1.8V, Ids@2A = 50m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack application

 9.1. Size:204K  m-mos
 mmn8804.pdf pdf_icon

MMN8822

MMN8804 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V ID= 8A ESD Protected Gate 2000V RDS(ON), Vgs@10V, Ids@8A = 13m RDS(ON), Vgs@4.5V, Ids@5A = 14m RDS(ON), Vgs@2.5V, Ids@4A = 19m RDS(ON), Vgs@1.8V, Ids@3A = 27m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Po

 9.2. Size:204K  m-mos
 mmn8818e.pdf pdf_icon

MMN8822

MMN8818E Data Sheet M-MOS Semiconductor Hong Kong Limited 30V Dual N-Channel Enhancement-Mode MOSFET VDS= 30V ID= 7A ESD Protected Geat 2000V RDS(ON), Vgs@10V, Ids@7A = 18m RDS(ON), Vgs@4.5V, Ids@5A = 20m RDS(ON), Vgs@2.5V, Ids@4A = 27m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability

 9.3. Size:161K  m-mos
 mmn8818n.pdf pdf_icon

MMN8822

MMN8818N Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V Dual N-Channel Enhancement-Mode MOSFET VDS= 30V ID= 7A ESD Protected Gate 2000V RDS(ON), Vgs@10V, Ids@7A = 18m RDS(ON), Vgs@4.5V, Ids@5A = 20m RDS(ON), Vgs@2.5V, Ids@4A = 27m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing cap

MOSTRAR MÁS

Otros transistores... MMN7402, MMN75N03, MMN8205, MMN8218, MMN8220, MMN8804, MMN8818E, MMN8818N, 2SK3568, MMN9926, MMN9926BDY, MMN9926E, MMP2301, MMP2311, MMP2323, MMP3401, MMP3415E