MMP4435BDY Todos los transistores

 

MMP4435BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMP4435BDY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.04 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SO-8
 

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MMP4435BDY Datasheet (PDF)

 ..1. Size:245K  m-mos
 mmp4435bdy.pdf pdf_icon

MMP4435BDY

MMP4435BDYPackage Data SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-9.1A = 20mRDS(ON), Vgs@-4.5V, Ids@-6.9A = 35mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteri

 9.1. Size:205K  m-mos
 mmp4415a.pdf pdf_icon

MMP4435BDY

MMP4415AData SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25oC unl

 9.2. Size:154K  m-mos
 mmp4411.pdf pdf_icon

MMP4435BDY

MMP4411Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 32mRDS(ON), Vgs@-4.5V, Ids@-5A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25

 9.3. Size:150K  m-mos
 mmp4411dy.pdf pdf_icon

MMP4435BDY

MMP4411DYData SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-13.0A = 10mRDS(ON), Vgs@-4.5V, Ids@-10.0A = 15.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristic

MOSTRAR MÁS

Otros transistores... MMP4383 , MMP4399 , MMP4407 , MMP4411 , MMP4411DY , MMP4415A , MMP4425 , MMP4425DY , MMIS60R580P , MMP60R190PTH , MMP60R195PCTH , MMP60R290PCTH , MMP60R290PTH , MMP60R360PTH , MMP60R580PTH , MMP60R750PTH , MMP6463 .

History: BUK9K45-100E | BXL4001 | VBA1311 | AP8600MT | HAF2011L

 

 
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