MMP4435BDY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMP4435BDY

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.04 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SO-8

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MMP4435BDY datasheet

 ..1. Size:245K  m-mos
 mmp4435bdy.pdf pdf_icon

MMP4435BDY

MMP4435BDY Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-9.1A = 20m RDS(ON), Vgs@-4.5V, Ids@-6.9A = 35m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S0-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteri

 9.1. Size:205K  m-mos
 mmp4415a.pdf pdf_icon

MMP4435BDY

MMP4415A Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-8A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25oC unl

 9.2. Size:154K  m-mos
 mmp4411.pdf pdf_icon

MMP4435BDY

MMP4411 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-8A = 32m RDS(ON), Vgs@-4.5V, Ids@-5A = 55m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SO-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25

 9.3. Size:150K  m-mos
 mmp4411dy.pdf pdf_icon

MMP4435BDY

MMP4411DY Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-13.0A = 10m RDS(ON), Vgs@-4.5V, Ids@-10.0A = 15.5m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SO-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristic

MOSTRAR MÁS

Otros transistores... MMP4383, MMP4399, MMP4407, MMP4411, MMP4411DY, MMP4415A, MMP4425, MMP4425DY, 7N60, MMP60R190PTH, MMP60R195PCTH, MMP60R290PCTH, MMP60R290PTH, MMP60R360PTH, MMP60R580PTH, MMP60R750PTH, MMP6463