All MOSFET. MMP4435BDY Datasheet

 

MMP4435BDY Datasheet and Replacement


   Type Designator: MMP4435BDY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.04 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO-8
 

 MMP4435BDY substitution

   - MOSFET ⓘ Cross-Reference Search

 

MMP4435BDY Datasheet (PDF)

 ..1. Size:245K  m-mos
 mmp4435bdy.pdf pdf_icon

MMP4435BDY

MMP4435BDYPackage Data SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-9.1A = 20mRDS(ON), Vgs@-4.5V, Ids@-6.9A = 35mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteri

 9.1. Size:205K  m-mos
 mmp4415a.pdf pdf_icon

MMP4435BDY

MMP4415AData SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25oC unl

 9.2. Size:154K  m-mos
 mmp4411.pdf pdf_icon

MMP4435BDY

MMP4411Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 32mRDS(ON), Vgs@-4.5V, Ids@-5A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25

 9.3. Size:150K  m-mos
 mmp4411dy.pdf pdf_icon

MMP4435BDY

MMP4411DYData SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-13.0A = 10mRDS(ON), Vgs@-4.5V, Ids@-10.0A = 15.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristic

SHOW MORE

Datasheet: MMP4383 , MMP4399 , MMP4407 , MMP4411 , MMP4411DY , MMP4415A , MMP4425 , MMP4425DY , IRF830 , MMP60R190PTH , MMP60R195PCTH , MMP60R290PCTH , MMP60R290PTH , MMP60R360PTH , MMP60R580PTH , MMP60R750PTH , MMP6463 .

History: IRFP27N60K | SSF1007 | IRF7233PBF | MTP1N95 | MS3N80

Keywords - MMP4435BDY MOSFET datasheet

 MMP4435BDY cross reference
 MMP4435BDY equivalent finder
 MMP4435BDY lookup
 MMP4435BDY substitution
 MMP4435BDY replacement

 

 
Back to Top

 


 
.