MMP60R190PTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMP60R190PTH
   Código: 60R190P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 154 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 51 nC
   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 1250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO-220

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MMP60R190PTH Datasheet (PDF)

..1. Size:1205K magnachip
mmp60r190pth.pdf

MMP60R190P Datasheet MMP60R190P 600V 0.19 N-channel MOSFET Description MMP60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

..2. Size:254K inchange semiconductor
mmp60r190pth.pdf

isc N-Channel MOSFET Transistor MMP60R190PTHFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

6.1. Size:1060K magnachip
mmp60r195pcth.pdf

MMP60R195PC Datasheet MMP60R195PC 600V 0.195 N-channel MOSFET Description MMP60R195PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

8.1. Size:1241K magnachip
mmp60r750pth.pdf

MMP60R750P Datasheet MMP60R750P 600V 0.75 N-channel MOSFET Description MMP60R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

8.2. Size:1033K magnachip
mmp60r290pcth.pdf

MMP60R290PC Datasheet MMP60R290PC 600V 0.29 N-channel MOSFET Description MMP60R290PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

8.3. Size:1547K magnachip
mmp60r290pth.pdf

MMP60R290P Datasheet MMP60R290P 600V 0.29 N-channel MOSFET Description MMP60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

8.4. Size:1171K magnachip
mmp60r580pth.pdf

MMP60R580P Datasheet MMP60R580P 600V 0.58 N-channel MOSFET Description MMP60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

8.5. Size:1271K magnachip
mmp60r360pth.pdf

MMP60R360P Datasheet MMP60R360P 600V 0.36 N-channel MOSFET Description MMP60R360P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

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