MMP60R190PTH MOSFET. Datasheet pdf. Equivalent
Type Designator: MMP60R190PTH
Marking Code: 60R190P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 154 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 51 nC
Rise Time (tr): 73 nS
Drain-Source Capacitance (Cd): 1250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO-220
MMP60R190PTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMP60R190PTH Datasheet (PDF)
mmp60r190pth.pdf
MMP60R190P Datasheet MMP60R190P 600V 0.19 N-channel MOSFET Description MMP60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmp60r190pth.pdf
isc N-Channel MOSFET Transistor MMP60R190PTHFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
mmp60r195pcth.pdf
MMP60R195PC Datasheet MMP60R195PC 600V 0.195 N-channel MOSFET Description MMP60R195PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmp60r750pth.pdf
MMP60R750P Datasheet MMP60R750P 600V 0.75 N-channel MOSFET Description MMP60R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmp60r290pcth.pdf
MMP60R290PC Datasheet MMP60R290PC 600V 0.29 N-channel MOSFET Description MMP60R290PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
mmp60r290pth.pdf
MMP60R290P Datasheet MMP60R290P 600V 0.29 N-channel MOSFET Description MMP60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmp60r580pth.pdf
MMP60R580P Datasheet MMP60R580P 600V 0.58 N-channel MOSFET Description MMP60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmp60r360pth.pdf
MMP60R360P Datasheet MMP60R360P 600V 0.36 N-channel MOSFET Description MMP60R360P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STP35N65M5
History: STP35N65M5
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