IXTH40N30 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH40N30

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 650 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: TO247

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IXTH40N30 datasheet

 ..1. Size:107K  ixys
 ixth35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTH40N30

VDSS ID25 RDS(on) MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V D (TAB) VGSM Tra

 ..2. Size:55K  ixys
 ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTH40N30

VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFET IXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V VGSM Tra

 7.1. Size:211K  inchange semiconductor
 ixth40n50l2.pdf pdf_icon

IXTH40N30

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTH40N50L2 FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:113K  ixys
 ixth48n65x2.pdf pdf_icon

IXTH40N30

Advance Technical Information X2-Class VDSS = 650V IXTH48N65X2 Power MOSFET ID25 = 48A RDS(on) 68m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Continu

MOSTRAR MÁS

Otros transistores... IXTH33N45, IXTH35N25MA, IXTH35N25MB, IXTH35N30, IXTH39N08MA, IXTH39N08MB, IXTH39N10MA, IXTH39N10MB, AON7408, IXTH42N15MA, IXTH42N15MB, IXTH42N20, IXTH42N20MA, IXTH42N20MB, IXTH50N20, IXTH5N100, IXTH5N100A