MMQ60R115PTH Todos los transistores

 

MMQ60R115PTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMQ60R115PTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 255 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 1780 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: TO-247

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MMQ60R115PTH Datasheet (PDF)

 ..1. Size:1271K  magnachip
mmq60r115pth.pdf

MMQ60R115PTH
MMQ60R115PTH

MMQ60R115P Datasheet MMQ60R115P 600V 0.115 N-channel MOSFET Description MMQ60R115P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 4.1. Size:1256K  magnachip
mmq60r115pcth.pdf

MMQ60R115PTH
MMQ60R115PTH

MMQ60R115PC Datasheet MMQ60R115PC 600V 0.115 N-channel MOSFET Description MMQ60R115PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 7.1. Size:1118K  magnachip
mmq60r190pth.pdf

MMQ60R115PTH
MMQ60R115PTH

MMQ60R190P Datasheet MMQ60R190P 600V 0.19 N-channel MOSFET Description MMQ60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.1. Size:1285K  magnachip
mmq60r070pth.pdf

MMQ60R115PTH
MMQ60R115PTH

MMQ60R070P Datasheet MMQ60R070P 600V 0.07 N-channel MOSFET Description MMQ60R070P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

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