MMQ60R115PTH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MMQ60R115PTH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 255 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 105 ns
Cossⓘ - Выходная емкость: 1780 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
MMQ60R115PTH Datasheet (PDF)
mmq60r115pth.pdf

MMQ60R115P Datasheet MMQ60R115P 600V 0.115 N-channel MOSFET Description MMQ60R115P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmq60r115pcth.pdf

MMQ60R115PC Datasheet MMQ60R115PC 600V 0.115 N-channel MOSFET Description MMQ60R115PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmq60r190pth.pdf

MMQ60R190P Datasheet MMQ60R190P 600V 0.19 N-channel MOSFET Description MMQ60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmq60r070pth.pdf

MMQ60R070P Datasheet MMQ60R070P 600V 0.07 N-channel MOSFET Description MMQ60R070P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: QM2411V | CEP02N6A | MMBF4091 | 2SK1752 | SSM6L13TU | CS12N65FA9H | 2SK1203
History: QM2411V | CEP02N6A | MMBF4091 | 2SK1752 | SSM6L13TU | CS12N65FA9H | 2SK1203



Список транзисторов
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