IXTH42N20 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTH42N20
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Encapsulados: TO247
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IXTH42N20 datasheet
ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf
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ixth48n65x2.pdf
Advance Technical Information X2-Class VDSS = 650V IXTH48N65X2 Power MOSFET ID25 = 48A RDS(on) 68m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Continu
ixth35n30 ixth40n30 ixtm40n30.pdf
VDSS ID25 RDS(on) MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V D (TAB) VGSM Tra
ixth440n055t2 tt440n055t2.pdf
Advance Technical Information TrenchT2TM VDSS = 55V IXTH440N055T2 ID25 = 440A Power MOSFET IXTT440N055T2 RDS(on) 1.8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSS Continuous
Otros transistores... IXTH35N30, IXTH39N08MA, IXTH39N08MB, IXTH39N10MA, IXTH39N10MB, IXTH40N30, IXTH42N15MA, IXTH42N15MB, 2N7002, IXTH42N20MA, IXTH42N20MB, IXTH50N20, IXTH5N100, IXTH5N100A, IXTH67N08MA, IXTH67N08MB, IXTH67N10
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