IXTH42N20 Specs and Replacement

Type Designator: IXTH42N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO247

IXTH42N20 substitution

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IXTH42N20 datasheet

 ..1. Size:378K  ixys
ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf pdf_icon

IXTH42N20

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine ... See More ⇒

 9.1. Size:113K  ixys
ixth48n65x2.pdf pdf_icon

IXTH42N20

Advance Technical Information X2-Class VDSS = 650V IXTH48N65X2 Power MOSFET ID25 = 48A RDS(on) 68m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Continu... See More ⇒

 9.2. Size:107K  ixys
ixth35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTH42N20

VDSS ID25 RDS(on) MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V D (TAB) VGSM Tra... See More ⇒

 9.3. Size:187K  ixys
ixth440n055t2 tt440n055t2.pdf pdf_icon

IXTH42N20

Advance Technical Information TrenchT2TM VDSS = 55V IXTH440N055T2 ID25 = 440A Power MOSFET IXTT440N055T2 RDS(on) 1.8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSS Continuous ... See More ⇒

Detailed specifications: IXTH35N30, IXTH39N08MA, IXTH39N08MB, IXTH39N10MA, IXTH39N10MB, IXTH40N30, IXTH42N15MA, IXTH42N15MB, 2N7002, IXTH42N20MA, IXTH42N20MB, IXTH50N20, IXTH5N100, IXTH5N100A, IXTH67N08MA, IXTH67N08MB, IXTH67N10

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.