IXTH42N20 Specs and Replacement
Type Designator: IXTH42N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ -
Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO247
- MOSFET ⓘ Cross-Reference Search
IXTH42N20 datasheet
..1. Size:378K ixys
ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf 
Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine ... See More ⇒
9.1. Size:113K ixys
ixth48n65x2.pdf 
Advance Technical Information X2-Class VDSS = 650V IXTH48N65X2 Power MOSFET ID25 = 48A RDS(on) 68m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Continu... See More ⇒
9.2. Size:107K ixys
ixth35n30 ixth40n30 ixtm40n30.pdf 
VDSS ID25 RDS(on) MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V D (TAB) VGSM Tra... See More ⇒
9.3. Size:187K ixys
ixth440n055t2 tt440n055t2.pdf 
Advance Technical Information TrenchT2TM VDSS = 55V IXTH440N055T2 ID25 = 440A Power MOSFET IXTT440N055T2 RDS(on) 1.8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSS Continuous ... See More ⇒
9.4. Size:154K ixys
ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf 
PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V... See More ⇒
9.5. Size:156K ixys
ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf 
PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V... See More ⇒
9.6. Size:114K ixys
ixth48n15.pdf 
Advance Technical Information IXTH 48N15 VDSS = 150 V High Current IXTT 48N15 ID25 = 48 A Power MOSFET RDS(on) = 32 m N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C48 A IDM TC = ... See More ⇒
9.7. Size:111K ixys
ixtp450p2 ixth450p2 ixtq450p2.pdf 
Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 RDS(on) 330m IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RG... See More ⇒
9.8. Size:55K ixys
ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf 
VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFET IXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V VGSM Tra... See More ⇒
9.9. Size:111K ixys
ixth4n100l.pdf 
Advance Technical Information LinearTM Power MOSFET VDSS = 1000V IXTH4N100L ID25 = 4A w/Extended FBSOA RDS(on) 2.8 N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G D (Tab) S Symbol Test Conditions Maximum Ratings G = Gate D = Drain VDSS TJ = 25 C to 150 C 1000 V S = Source Tab = Drain VDGR TJ = 25 C to 150 ... See More ⇒
9.10. Size:211K inchange semiconductor
ixth40n50l2.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTH40N50L2 FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: IXTH35N30, IXTH39N08MA, IXTH39N08MB, IXTH39N10MA, IXTH39N10MB, IXTH40N30, IXTH42N15MA, IXTH42N15MB, 2N7002, IXTH42N20MA, IXTH42N20MB, IXTH50N20, IXTH5N100, IXTH5N100A, IXTH67N08MA, IXTH67N08MB, IXTH67N10
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.