SM8206ACT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM8206ACT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 9.3 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: TSOT-23-6

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SM8206ACT Datasheet (PDF)

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sm8206act.pdf

SM8206ACTDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionG1 20V/6A,D1/D2G2 RDS(ON)= 26m(max.) @ VGS= 4V RDS(ON)= 36m(max.) @ VGS= 2.5VS1 Super High Dense Cell DesignD1/D2S2 Reliable and Rugged Lead Free and Green Devices AvailableTop View of TSOT-23-6 (RoHS Compliant)(2) (5)D2D1Applications Power Management in Notebook C

7.1. Size:260K sino
sm8206ao.pdf

SM8206AODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 20V/6A, S2S2G2RDS(ON)= 20m (typ.) @ VGS= 10VRDS(ON)= 23m (typ.) @ VGS= 4.5VDS1RDS(ON)= 27m (typ.) @ VGS= 3.1VS1G1RDS(ON)= 30m (typ.) @ VGS= 2.5VRDS(ON)= 42m (typ.) @ VGS= 1.8VTop View of TSSOP-8 Reliable and Rugged(1) (8) ESD ProtectedD D Lead Free and Green Devices Available (RoH

8.1. Size:846K globaltech semi
gsm8206.pdf

GSM8206 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8206, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=56m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m@VGS=-1.8V Super high density cell design for extremely These devices a

9.1. Size:235K sino
sm8205ao.pdf

SM8205AODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD2 18V/6A,S2S2RDS(ON)= 23m (typ.) @ VGS= 4.5VG2RDS(ON)= 34m (typ.) @ VGS= 2.5VD1 100% UIS Tested S1S1G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of TSSOP-8 (RoHS Compliant)(1) (8)D1 D2Applications(4) (5) Power Management in Notebook Computer,G1G2Po

9.2. Size:436K globaltech semi
gsm8205.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=37m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m@VGS=1.8V These devices are particularly suited for low Super high density cell design for ext

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