VN0106N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN0106N3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Corriente continua de drenaje |Id|: 2 A
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 20 pF
Resistencia entre drenaje y fuente RDS(on): 3 Ohm
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de MOSFET VN0106N3
VN0106N3 Datasheet (PDF)
vn0106.pdf
Supertex inc. VN0106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power
vn0104.pdf
Supertex inc. VN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power
vn0109.pdf
Supertex inc. VN0109N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon-gate Low power drive requirementmanufacturing process. This combination produces a device with Ease of parallelingthe power
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