VN0106N3 Todos los transistores

 

VN0106N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VN0106N3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO-92

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VN0106N3 datasheet

 ..1. Size:62K  njs
 vn0104n2 vn0104n3 vn0104n5 vn0104n6 vn0104n7 vn0104n9 vn0104nd vn0106n2 vn0106n3 vn0106n5 vn0106n6 vn0106n7 vn0106n9 vn0106nd vn0109n2 vn0109n3 vn0109n5 vn0109n9 vn0109nd.pdf pdf_icon

VN0106N3

 8.1. Size:51K  njs
 zvn0106a.pdf pdf_icon

VN0106N3

 8.2. Size:587K  supertex
 vn0106.pdf pdf_icon

VN0106N3

Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power

 9.1. Size:588K  supertex
 vn0104.pdf pdf_icon

VN0106N3

Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power

MOSTRAR MÁS

Otros transistores... VN0104N2 , VN0104N3 , VN0104N5 , VN0104N6 , VN0104N7 , VN0104N9 , VN0104ND , VN0106N2 , IRFP460 , VN0106N5 , VN0106N6 , VN0106N7 , VN0106N9 , VN0106ND , VN0109N2 , VN0109N3 , VN0109N5 .

History: FTU02N60B | STB9NK90Z | HY3408 | FDB14AN06LA0F085 | FS10UM-9 | IRF421 | IRFH7914

 

 

 

 

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