VN1206 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN1206
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 50 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
Encapsulados: TO-92
Búsqueda de reemplazo de VN1206 MOSFET
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VN1206 datasheet
vn1206.pdf
Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power h
vn1206n5.pdf
isc N-Channel MOSFET Transistor VN1206N5 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
7mbr75vn120-50.pdf
7MBR75VN120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low V (sat) CE Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless o
Otros transistores... VN0660N5, VN0808, VN10K, VN10KCSM4, VN10K-TO18, VN10LE, VN10LLS, VN10LM, K4145, VN1304, VN1306, VN1310, VN2106, VN2110, VN2210N2, VN2210N3, VN2222KM
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