VN1206 Todos los transistores

 

VN1206 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VN1206
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1 W
   Voltaje máximo drenador - fuente |Vds|: 120 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 0.19 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Tiempo de subida (tr): 8 nS
   Conductancia de drenaje-sustrato (Cd): 50 pF
   Resistencia entre drenaje y fuente RDS(on): 6 Ohm
   Paquete / Cubierta: TO-92

 Búsqueda de reemplazo de MOSFET VN1206

 

VN1206 Datasheet (PDF)

 ..1. Size:544K  supertex
vn1206.pdf

VN1206
VN1206

Supertex inc. VN1206N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h

 0.2. Size:259K  inchange semiconductor
vn1206n5.pdf

VN1206
VN1206

isc N-Channel MOSFET Transistor VN1206N5FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.1. Size:756K  fuji
7mbr75vn120-50.pdf

VN1206
VN1206

7MBR75VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 75A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless o

 9.2. Size:426K  fuji
7mbr50vn120-50.pdf

VN1206
VN1206

http://www.fujielectric.com/products/semiconductor/7MBR50VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteris

 9.3. Size:768K  fuji
7mbr150vn120-50.pdf

VN1206
VN1206

7MBR150VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 150A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

 9.4. Size:748K  fuji
7mbr100vn120-50.pdf

VN1206
VN1206

7MBR100VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 100A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

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