Справочник MOSFET. VN1206

 

VN1206 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VN1206
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.19 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6 Ohm
   Тип корпуса: TO-92

 Аналог (замена) для VN1206

 

 

VN1206 Datasheet (PDF)

 ..1. Size:544K  supertex
 vn1206.pdf

VN1206 VN1206

Supertex inc. VN1206N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h

 0.1. Size:145K  supertex
 vn1206n1-n2-n5 vn1204n1-n2-n5 vn1210n1-n2-n5.pdf

VN1206 VN1206

 0.2. Size:259K  inchange semiconductor
 vn1206n5.pdf

VN1206 VN1206

isc N-Channel MOSFET Transistor VN1206N5FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.1. Size:756K  fuji
 7mbr75vn120-50.pdf

VN1206 VN1206

7MBR75VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 75A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless o

 9.2. Size:426K  fuji
 7mbr50vn120-50.pdf

VN1206 VN1206

http://www.fujielectric.com/products/semiconductor/7MBR50VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteris

 9.3. Size:768K  fuji
 7mbr150vn120-50.pdf

VN1206 VN1206

7MBR150VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 150A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

 9.4. Size:748K  fuji
 7mbr100vn120-50.pdf

VN1206 VN1206

7MBR100VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 100A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

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