VN2110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN2110
Código: N1A*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 Vtrⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 13 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET VN2110
VN2110 Datasheet (PDF)
vn2110.pdf
Supertex inc. VN2110N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off)transistor utilizes a vertical DMOS structure and Supertexs Low power drive requirementwell-proven, silicon-gate manufacturing process. This Ease of parallelingcombination produces a device wit
zvn2110g.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN2110GMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 FEATURESD* 6A PULSE DRAIN CURRENT* FAST SWITCHING SPEED=VVV SVVDPARTMARKING DETAIL - ZVN2110GCOMPLEMENTARY TYPE - ZVP2110GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITVDrain-Source Voltage VDS 100 V10 Continuous Drain Current at Tamb=25C ID 500 mAPulsed Drain
zvn2110astoa zvn2110astob zvn2110astz.pdf
N-CHANNEL ENHANCEMENT0A ZVN2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDSVGS=10V * RDS(on)= 49V8V7V6VD G S5VE-LineTO92 Compatible4VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS
zvn2110a.pdf
N-CHANNEL ENHANCEMENT0A ZVN2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDSVGS=10V * RDS(on)= 49V8V7V6VD G S5VE-LineTO92 Compatible4VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS
zvn2110gta zvn2110gtc.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN2110GMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 FEATURESD* 6A PULSE DRAIN CURRENT* FAST SWITCHING SPEED=VVV SVVDPARTMARKING DETAIL - ZVN2110GCOMPLEMENTARY TYPE - ZVP2110GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITVDrain-Source Voltage VDS 100 V10 Continuous Drain Current at Tamb=25C ID 500 mAPulsed Drain
zvn2110c.pdf
N-CHANNEL ENHANCEMENTZVN2110CMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-Line T V TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V 8 V ID VD V V I
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918