VN2110 Todos los transistores

 ..1. Size:631K  supertex
 vn2110.pdf

Supertex inc. VN2110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s Low power drive requirement well-proven, silicon-gate manufacturing process. This Ease of paralleling combination produces a device wit

 0.1. Size:48K  diodes
 zvn2110g.pdf

SOT223 N-CHANNEL ENHANCEMENT ZVN2110G MODE VERTICAL DMOS FET ISSUE 3 OCTOBER 1995 FEATURES D * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED = V V V S V V D PARTMARKING DETAIL - ZVN2110 G COMPLEMENTARY TYPE - ZVP2110G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 100 V 10 Continuous Drain Current at Tamb=25 C ID 500 mA Pulsed Drain

 0.2. Size:61K  diodes
 zvn2110astoa zvn2110astob zvn2110astz.pdf

 0.3. Size:66K  diodes
 zvn2110a.pdf

 0.4. Size:37K  diodes
 zvn2110gta zvn2110gtc.pdf

SOT223 N-CHANNEL ENHANCEMENT ZVN2110G MODE VERTICAL DMOS FET ISSUE 3 OCTOBER 1995 FEATURES D * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED = V V V S V V D PARTMARKING DETAIL - ZVN2110 G COMPLEMENTARY TYPE - ZVP2110G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 100 V 10 Continuous Drain Current at Tamb=25 C ID 500 mA Pulsed Drain

 0.5. Size:26K  diodes
 zvn2110c.pdf

N-CHANNEL ENHANCEMENT ZVN2110C MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 T V I VD D D E-Line T V TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I IT DITI D i VD V ID V V V I T I V 8 V ID VD V V I