VN2224 Todos los transistores

 ..1. Size:42K  diodes
 vn2222 vn2224.pdf

VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-92 20-Pin C-Dip 220V 1.25 5.0A VN2222NC 240V 1.25 5.0A VN2224N3 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. These enhancement-mode (n

 ..2. Size:631K  supertex
 vn2224.pdf

Supertex inc. VN2224 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power h

 9.1. Size:57K  1
 vn0610l vn10kls vn2222l.pdf

VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Rel

 9.2. Size:68K  motorola
 vn2222ll.rev1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by VN2222LL/D TMOS FET Transistor N Channel Enhancement VN2222LL 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 Drain Source Voltage VDSS 60 Vdc 2 3 Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc CASE 29 04, STYLE 22 Gate Source Voltage TO 92 (TO 226AA)

 9.3. Size:622K  njs
 vn2222km.pdf

 9.4. Size:57K  vishay
 vn0610l vn10kls vn2222l.pdf

VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Rel

 9.5. Size:51K  vishay
 vn10lls vn0605t vn0610ll vn2222ll.pdf

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 60 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2.5 W

 9.6. Size:17K  diodes
 vn2222ll.pdf

N-CHANNEL ENHANCEMENT VN2222LL MODE VERTICAL DMOS FET ISSUE 2 FEB 94 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb = 25 C ID 150 mA Pulsed Drain Current IDM 1A Gate Source Voltage VGS 40 V Power Dissipation at Tamb = 25 C Ptot 400 mW Operating and Storage Temperature Range Tj Tstg -55 to

 9.7. Size:92K  onsemi
 vn2222llg.pdf

VN2222LLG Small Signal MOSFET 150 mAmps, 60 Volts N-Channel TO-92 http //onsemi.com http //onsemi.com Features This is a Pb-Free Device* 150 mA, 60 V RDS(on) = 7.5 W MAXIMUM RATINGS N-Channel Rating Symbol Value Unit D Drain -Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate-Source Voltage G - Continuous VGS 20 Vdc - Non-repetitive (tp 5

 9.8. Size:202K  siliconix
 vn0619l vn10km vn2222l.pdf

 9.9. Size:47K  siliconix
 vn0605t vn10le vn10lm vn2222lm.pdf

VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN0605T VN2222LL VN10LM VN0610LL VN2222LM Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 60 60 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 7.5 @ VGS